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RUF015N02
Transistors
Electrical characteristics curves
1000
100
Ta=25 ° C
f=1MHz
V GS =0V
Ciss
1000
100
tf
td(off)
Ta=25 ° C
V DD =10V
V GS =4.5V
R G =10 ?
Pulsed
5
Ta=25 ° C
V DD =10V
I D =1.5A
4 R G =10 ?
Pulsed
3
2
10
td(on)
1
tr
Coss
Crss
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0
0.0 0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1
0.1
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
V DS =10V
Pulsed
500
450
400
350
300
250
I D =1.5A
Ta=25 ° C
Pulsed
10
1
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
V GS =0V
Pulsed
0.01
200
0.001
150
100
50
I D =0.8A
0.1
0.0001
0.0
0.5
1.0
1.5
2.0
0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : V GS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
Ta=125 ° C
75 ° C
25 ° C
V GS =1.8V
Pulsed
1000
Ta=125 ° C
75 ° C
25 ° C
V GS =2.5V
Pulsed
1000
Ta=125 ° C
75 ° C
V GS =4.5V
Pulsed
100
? 25 ° C
100
? 25 ° C
100
25 ° C
? 25 ° C
10
0.01
0.1
1
10
10
0.01
0.1
1
10
10
0.01
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
DRAIN CURRENT : I D (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
3/3
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